![]() degree from the School of Physics and Electronics, Hunan University, Changsha, China, in 2016. Her research interests include electric-double-layer synaptic transistors and their application in neuromorphic devices Now she is a PhD student at the School of Electronic Science and Engineering, Nanjing University. Ying Zhu received her BS degree in 2018 from the School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, China. Key words: indium–gallium–zinc–oxide, thin-film transistors, flat panel displays, sensors, flexible electronics, neuromorphic systems The last part of this review consists of the conclusions and gives an outlook over the field with a prediction for the future. In particular, the realization of flexible electronic systems is discussed. Afterwards, the recent advances of IGZO-based TFT applications are summarized, including flat panel display drivers, novel sensors, and emerging neuromorphic systems. In this part, IGZO material electron travelling orbitals and deposition methods are introduced, and the specific device structures and electrical performance are also presented. After a brief introduction of the history of IGZO and the main advantages of IGZO-based TFTs, an overview of IGZO materials and IGZO-based TFTs is given. This article reviews the recent progress and major trends in the field of IGZO-based TFTs. Abstract: Since the invention of amorphous indium–gallium–zinc–oxide (IGZO) based thin-film transistors (TFTs) by Hideo Hosono in 2004, investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electrical performance, large-area uniformity, and low processing temperature. ![]()
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